By Richard C. Alkire, Heinz Gerischer, Dieter M. Kolb, Charles W. Tobias
This sequence, previously edited by way of Heinz Gerischer and Charls V. Tobias, now edited by way of Richard C. Alkire and Dieter M. Kolb, has been warmly welcomed by way of scientists world-wide that's mirrored within the reports of the former volumes: 'This is a vital booklet for researchers in electrochemistry; it covers components of either primary and useful significance, with experiences of top of the range. the fabric is particularly good awarded and the alternative of themes displays a balanced editorial coverage that's welcomed.' The Analyst 'All the contributions during this quantity are good as much as the normal of this glorious sequence and should be of serious worth to electrochemists... The editors back should be congratulated in this advantageous number of reviews.' magazine of Electroanalytical Chemistry and Interfacial Chemistry `...competently and obviously written.' Berichte der Bunsen- Gesellschaft für Physikalische Chemie
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Additional resources for Advances in electrochemical science and engineering
Topographic changes between two images were too fast to be analyzed. Much slower dissolution rates must be monitored (see the discussion of Si in Sec. 1). In darkness no topographic change was observed within the scale used. This is in contrast to the report of Thundat et al. , who observed that the sur- - 48 P. Allongue face, initially rough, had the tendency to smoothen after repeated scanning. STM imaging also became difficult with time, suggesting that an oxide layer is formed under the tip due to the high electric field.
Pt-Ir tips might be more adequate than tungsten tips in these solutions. The large-scale images of n-Si(ll1) presented in Fig. 21 nevertheless confirm the statements of the preceding section, with a gradual change of the surface topography with the pH. At p H 4 the surface is rough, in the subnanometer range, whereas flat, smooth terraces are seen at pH 8. Multiple steps are seen in the image. Images are very stable with time, indicating that the etching is stopped at cathodic bias. Yau et al. [I91 observed n-Si(l11) in 1Yo HF with or without hydrogen peroxide (H202)added.
STM images (left) and spectroscopy results, plotted as log ir. - U,. curves (right), of GaAs in the ambient atmosphere. The surface is coated with sulfide in (a) and simply etched in (b) (after ~71). and P2S5/(NH4),S. The second treatment stabilizes the surface over hours in air by formation of an oxide monolayer between the sulfide layer and GaAs . The coating does not degrade under the tip. The same solution also stabilizes the surface of InP . The surface looks smoother after passivation if it is not rinsed in deionized H20.