Advances in Electronics and Electron Physics, Vol. 39 by L. Marton (Ed.)

By L. Marton (Ed.)

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78), those in slab 2 are IC/(r) = c C,(ko) exp ( W k O + g) * (r - R)) 8 = exp ( - 2niko * R) C C8(ko)exp ( - 2nig * R ) 8 x exp (2nik8 * r). (102) The phase factor exp (-2xik0 * R) can be removed since it is independent of g, and we see that the C i s in slab 2 are obtained by multiplying those in slab 1 by exp ( - 2nig R). The matrix C2 for slab 2 is therefore Q; 'C, where C is ELECTRON DIFFRACTION THEORY AND ELECTRON MICROSCOPY 41 the matrix for slab 1 and Q2 is a diagonal matrix whose elements are exp (2nig * R).

ELECTRON DIFFRACTION THEORY A N D ELECTRON MICROSCOPY 31 symmetrical Laue case the normal to the crystal surface through the end A of the wave vector K is parallel to the zone boundary, and real intersections with the two branches of the dispersion surface occur. Thus the wave vectors of the crystal waves are real giving rise‘to propagating waves. However, in the symmetrical Bragg case the normal to the crystal surface through A is perpendicular to the zone boundary. Hence there is a range of angle around the Bragg position where no real intersections with the two branches of the dispersion surface occur.

This procedure removes the depth oscillations arising from the positions of P and P' near the circles and gives the image profiles shown in Fig. 17 for a screw dislocation for various values of n = g b. /I= 27rsx FIG. 17. Intensity profiles of images of a screw dislocation for various values of n. After P. B. Hirsch et al. (29). Courtesy of the Royal Society. We note from Fig. 17 that the image profile has a peak which lies to one side of the core of the dislocation and that the profile becomes narrower for increasing s.

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